Synthesis for Sample 6751 (single material, 220325-K2-5)

Type: Synthesis

ObjectId: 10367 ExternalId: 58421

Created: 6/4/2023 10:34:43 PM by INF) Dudarev Victor [vic_dudarev@mail.ru]

Updated: 7/13/2026 10:21:27 AM by C02) Perez Mendoza Alejandro Esteban [alejandro.perez-mendoza@uni-due.de]

Access: Public Sort Code (asc): -98

License: CC BY 4.0

Description: Synthesis for Sample 6751 (single material, 220325-K2-5, K6 - Gero, 150 nm Pt on Si+SiO2)

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Type Name Value Comment

The table

Path Name Value Unit
general process parameters => start vacuum start vacuum 3.4E-8 Torr
general process parameters => process duration process duration 1900 s
general process parameters => substrate temperature substrate temperature 25.3 °C
general process parameters => substrate rotation substrate rotation 10 RPM
general process parameters => process gas process gas Ar
general process parameters => reactive gas 1 reactive gas 1 -
general process parameters => flow RG 1 flow RG 1 - sccm
general process parameters => flow RG 2 flow RG 2 - sccm
general process parameters => reactive gas 2 reactive gas 2 -
general process parameters => table height table height 91.6 mm
general process parameters => substrate position substrate position -34.3 °
general process parameters => process pressure process pressure 5 mTorr
general process parameters => flow PG flow PG 50 sccm
general process parameters => end vacuum end vacuum 1.9E-7 Torr
target source configuration => Cathode 1 => Mag1-RF => ignition power cathode 1 ignition power cathode 1 60 W
target source configuration => Cathode 1 => Mag1-RF => ramp power step cathode 1 ramp power step cathode 1 - W
target source configuration => Cathode 1 => Mag1-RF => duration per step cathode 1 duration per step cathode 1 - s
target source configuration => Cathode 1 => Mag1-RF => pre clean power 1 pre clean power 1 60 W
target source configuration => Cathode 1 => Mag1-RF => pre clean time 1 pre clean time 1 100 s
target source configuration => Cathode 1 => Mag1-RF => pre clean pressure cathode 1 pre clean pressure cathode 1 20 mTorr
target source configuration => Cathode 1 => Mag1-RF => target material 1 target material 1 Pt
target source configuration => Cathode 1 => Mag1-RF => target 1 ID target 1 ID 1
target source configuration => Cathode 1 => Mag1-RF => power forward cathode 1 power forward cathode 1 180 W
target source configuration => Cathode 1 => Mag1-RF => power reflected cathode 1 power reflected cathode 1 0 W
target source configuration => Cathode 1 => Mag1-RF => voltage cathode 1 voltage cathode 1 - V
target source configuration => Cathode 1 => Mag1-RF => load cathode 1 load cathode 1 - %
target source configuration => Cathode 1 => Mag1-RF => tune cathode 1 tune cathode 1 - %
target source configuration => Cathode 1 => Mag1-RF => deposition rate 1 deposition rate 1 0.079 nm/s